Cs₂ZnGe₃Te₈ is a quaternary chalcogenide semiconductor compound combining cesium, zinc, germanium, and tellurium. This material belongs to the family of complex telluride semiconductors currently under investigation in research settings for optoelectronic and photovoltaic applications, particularly where wide bandgap or infrared response characteristics are desirable. The compound's multi-element composition and layered structural potential distinguish it from binary or ternary semiconductors, making it a candidate for exploring novel electronic or photonic functionality in emerging device platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.070 | eV | — |