Cs2La1.19Bi8.81S16
semiconductor· Cs2La1.19Bi8.81S16
Cs₂La₁.₁₉Bi₈.₈₁S₁₆ is a mixed-metal sulfide semiconductor compound combining cesium, lanthanum, and bismuth in a layered crystal structure. This is a research-phase material belonging to the family of heavy-metal chalcogenides, investigated primarily for its potential in photovoltaic and optoelectronic applications where bismuth-based semiconductors offer advantages in band-gap engineering and defect tolerance. The material's composition—combining rare-earth (lanthanum) and post-transition metal (bismuth) cations—positions it as a candidate for next-generation solar absorbers or infrared detectors, though practical device implementation remains under academic and industrial exploration.
Experimental photovoltaic absorbersInfrared optoelectronicsSemiconductor researchLead-free alternative semiconductorsThin-film device development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.