Cs₂La₁.₁₉Bi₈.₈₁S₁₆ is a mixed-metal sulfide semiconductor compound combining cesium, lanthanum, and bismuth in a layered crystal structure. This is a research-phase material belonging to the family of heavy-metal chalcogenides, investigated primarily for its potential in photovoltaic and optoelectronic applications where bismuth-based semiconductors offer advantages in band-gap engineering and defect tolerance. The material's composition—combining rare-earth (lanthanum) and post-transition metal (bismuth) cations—positions it as a candidate for next-generation solar absorbers or infrared detectors, though practical device implementation remains under academic and industrial exploration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.000 | eV | — |