Cs2Bi8.81La1.19S16
semiconductor· Cs2Bi8.81La1.19S16
Cs₂Bi₈.₈₁La₁.₁₉S₁₆ is a mixed-metal sulfide semiconductor compound combining cesium, bismuth, lanthanum, and sulfur in a layered crystal structure. This is a research-phase material being investigated for its electronic and photonic properties as part of the broader family of heavy-metal chalcogenides used to explore new semiconducting phases with potential for optoelectronic or thermoelectric applications. The lanthanide substitution into the bismuth sulfide framework is designed to engineer band structure and transport properties that may offer advantages over conventional binary sulfides in specialized device contexts.
experimental photovoltaicsthermoelectric researchoptical sensing (research phase)solid-state chemistry explorationwide-bandgap semiconductor developmentnext-generation chalcogenide devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.