Cs₂Bi₈.₈₁La₁.₁₉S₁₆ is a mixed-metal sulfide semiconductor compound combining cesium, bismuth, lanthanum, and sulfur in a layered crystal structure. This is a research-phase material being investigated for its electronic and photonic properties as part of the broader family of heavy-metal chalcogenides used to explore new semiconducting phases with potential for optoelectronic or thermoelectric applications. The lanthanide substitution into the bismuth sulfide framework is designed to engineer band structure and transport properties that may offer advantages over conventional binary sulfides in specialized device contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.000 | eV | — |