Chromium disilicide (CrSi₂) is an intermetallic compound semiconductor belonging to the transition metal silicide family, characterized by a hexagonal crystal structure and metallic-like electrical and thermal properties unusual for semiconductors. It is primarily investigated for high-temperature applications where conventional semiconductors fail, particularly in thermoelectric devices, integrated circuits operating at elevated temperatures, and specialized optoelectronic components. Engineers select CrSi₂ over traditional semiconductors (silicon, germanium) when extreme thermal stability, enhanced thermal conductivity, and operation above 500°C are critical; it is also studied as an alternative to more expensive rare-earth silicides in aerospace and automotive thermal management systems, though it remains less commercialized than competing high-temperature materials like SiC or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 195.4 | GPa | DFT · PBE | ||
| ↳ | 195.5 | GPa | DFT | ||
| ↳ | 183.2 | GPa | DFT · OptB88vdW | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.02256 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.1843 | - | DFT · PBE | ||
| ↳ | 0.1600 | - | DFT · OptB88vdW | ||
Shear Modulus(G)3 entries | 156.3 | GPa | DFT · PBE | ||
| ↳ | 156.3 | GPa | DFT | ||
| ↳ | 161.6 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.937 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.300 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00245 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00269 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | 18.00 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 15.37 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.2078 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.2674 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data