Cr6As3 is a chromium arsenide compound semiconductor with a layered crystal structure, belonging to the family of transition metal pnictides. This material remains primarily in the research phase, studied for its potential in high-performance electronic and optoelectronic devices due to its unique band structure and tunable properties. Researchers investigate Cr6As3 as a candidate for next-generation semiconductors, spintronic applications, and quantum materials, where its interplay between electronic and magnetic properties could offer advantages over conventional semiconductors in specialized applications requiring strong spin-orbit coupling or low-dimensional transport phenomena.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,576.1 | ksi | — | ||
Shear Modulus(G) | 2,886.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.06700 | eV/atom | — |