Cr₂AsSe is a ternary chalcogenide semiconductor compound combining chromium with arsenic and selenium. This material belongs to the family of transition metal chalcogenides and exists primarily in research contexts, where it is investigated for potential optoelectronic and photovoltaic applications due to the bandgap engineering possibilities offered by its mixed anion composition. While not yet established in mainstream industrial production, materials in this class are of interest for next-generation thin-film solar cells, photodetectors, and other low-dimensional electronic devices where the tunable electronic structure of layered or quasi-2D semiconductors can be leveraged.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 97.48 | GPa | — | ||
Shear Modulus(G) | 58.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00780 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.03600 | eV/atom | — |