Cr1Se4Nb2 is a ternary layered semiconductor compound combining chromium, selenium, and niobium—a material family being investigated for advanced electronic and optoelectronic applications. This is a research-stage material rather than an established industrial product; compounds in this family are of interest because they can exhibit tunable band gaps, strong light-matter interactions, and potential for heterostructure engineering. Engineers considering this material should expect it to be relevant for exploratory device work rather than production-scale applications, particularly in contexts where layered crystal structure and transition-metal chalcogenide properties are strategically exploited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.67 | GPa | — | ||
Shear Modulus(G) | 52.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7500 | eV/atom | — |