Chromium gallium sulfide (CrGa₂S₄) is a ternary layered semiconductor compound combining transition metal and III-V semiconductor characteristics. This is primarily a research material explored for its potential in optoelectronics, photocatalysis, and two-dimensional device applications, where its layered crystal structure and tunable electronic properties offer advantages over conventional bulk semiconductors for next-generation thin-film and quantum devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.02 | GPa | — | ||
Shear Modulus(G) | 20.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3049 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5690 | eV/atom | — |