CoAsSe is a ternary III-V semiconductor compound combining cobalt, arsenic, and selenium elements, belonging to the broader class of chalcogenide and arsenide semiconductors. This material remains largely in the research and development phase, with potential applications in optoelectronic devices, photovoltaics, and infrared detection systems where tunable bandgap and carrier mobility properties are advantageous. CoAsSe represents an experimental composition within the family of III-V materials, offering researchers the ability to engineer electronic properties through composition control for next-generation semiconductor devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2552 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3550 | eV | DFT · OptB88vdW | ||
| ↳ | 0.2000 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 29.26 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.03333 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.03333 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00219 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00152 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -326.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 237.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04160 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3309 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data