CoAsSe is a ternary III-V semiconductor compound combining cobalt, arsenic, and selenium elements, belonging to the broader class of chalcogenide and arsenide semiconductors. This material remains largely in the research and development phase, with potential applications in optoelectronic devices, photovoltaics, and infrared detection systems where tunable bandgap and carrier mobility properties are advantageous. CoAsSe represents an experimental composition within the family of III-V materials, offering researchers the ability to engineer electronic properties through composition control for next-generation semiconductor devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.064 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -326.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04160 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3309 | eV/atom | — |