CoAsO2F

semiconductor

· CoAsO2F

CoAsO₂F is an experimental mixed-anion semiconductor compound combining cobalt, arsenic, oxygen, and fluorine in a crystalline structure. This material belongs to the family of oxy-fluoride semiconductors, which are under investigation for potential optoelectronic and photocatalytic applications where the combination of oxygen and fluorine anionic ligands can tune electronic band gaps and charge transport properties. While not yet established in mainstream industrial production, compounds in this class are of research interest for emerging technologies requiring tunable semiconductor properties and mixed-anion frameworks.

photocatalysis researchoptoelectronic devices (experimental)band gap engineeringfluoride solid-state chemistrymaterials discovery screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	2.684	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CoAsO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control