Co8Ge12S12 is a quaternary chalcogenide semiconductor compound combining cobalt, germanium, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of metal chalcogenides and represents an experimental composition primarily of research interest for exploring electronic and photonic properties in layered or framework structures. Applications remain largely within laboratory and fundamental materials science contexts, with potential relevance to emerging technologies such as thermoelectric devices, photovoltaics, or solid-state electronics if its band structure and carrier transport properties prove favorable compared to established binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5356 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4750 | eV/atom | — |