Co₅Bi₁O₁₂ is a complex mixed-metal oxide semiconductor combining cobalt and bismuth in a structured ceramic lattice. This is primarily a research-phase material studied for its potential in photocatalysis, gas sensing, and solid-state electronic applications, where the dual-metal composition may offer tunable bandgap and enhanced catalytic activity compared to single-metal oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05910 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9390 | eV/atom | — |