Co₃Bi₁ is an intermetallic semiconductor compound composed of cobalt and bismuth, representing a member of the cobalt-bismuth binary system. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in thermoelectric devices and advanced electronic components where the unique electronic properties of cobalt-bismuth phases could be leveraged. Engineers would consider this material for specialized applications requiring semiconductor behavior combined with the specific electronic characteristics imparted by bismuth doping in a cobalt matrix.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,463.2 | ksi | — | ||
Shear Modulus(G) | 6,841 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4430 | eV/atom | — |