Co₂Bi₂O₈ is a mixed-metal oxide semiconductor compound combining cobalt and bismuth in a layered or complex crystal structure. This material belongs to the class of transition metal bismuthates, which are primarily explored in research settings for photocatalytic and electrochemical applications due to their bandgap engineering potential and layered electronic properties. While not yet widely established in mainstream industrial production, materials in this family are of growing interest for environmental remediation and energy conversion applications where bismuth-based semiconductors offer advantages in visible-light activity and chemical stability compared to conventional titanium dioxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04790 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9880 | eV/atom | — |