Co₁Bi₂O₆ is an oxide semiconductor compound combining cobalt and bismuth in a ternary ceramic system. This material is primarily of research interest for photocatalysis, optoelectronic devices, and energy conversion applications, where its band structure and semiconducting properties are being explored for next-generation technologies. While not yet widely commercialized, compounds in the cobalt-bismuth oxide family are attractive for environmental remediation and solar energy harvesting due to their visible-light activity and tunable electronic properties compared to conventional single-metal oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 58.77 | GPa | — | ||
Shear Modulus(G) | 30.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8390 | eV/atom | — |