Ce₂Si₂Os₂ is an experimental intermetallic semiconductor compound combining cerium, silicon, and osmium elements, representing a rare-earth transition metal silicide system. While not widely established in commercial production, this material belongs to the family of high-performance intermetallics and rare-earth compounds being investigated for advanced electronic and structural applications where thermal stability, electronic conductivity, and chemical resistance are critical. Research into such ternary rare-earth silicides focuses on potential use in extreme-environment electronics, thermoelectric devices, and high-temperature structural applications where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 105.5 | GPa | — | ||
Shear Modulus(G) | 49.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5930 | eV/atom | — |