Ce₂Ga₂Ge₂ is an intermetallic semiconductor compound combining rare-earth cerium with gallium and germanium elements. This material belongs to the family of rare-earth-based semiconductors and is primarily of research and developmental interest rather than established in high-volume industrial production. The compound shows potential for advanced electronic and optoelectronic applications where the unique electronic properties of cerium-doped systems could enable new device architectures, though current use remains largely confined to materials science research and proof-of-concept studies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 73.33 | GPa | — | ||
Shear Modulus(G) | 37.08 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6100 | eV/atom | — |