Ce₂Ag₂As₄ is an intermetallic semiconductor compound combining cerium, silver, and arsenic in a defined stoichiometric ratio. This material belongs to the family of rare-earth-based semiconductors and is primarily of research interest rather than established industrial production. The compound's potential applications lie in thermoelectric energy conversion, low-temperature electronics, and specialized optoelectronic devices where rare-earth semiconductors offer advantages in bandgap engineering and carrier dynamics; however, adoption depends on scalability, cost competitiveness, and performance validation against established alternatives like bismuth telluride thermoelectrics or conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7960 | eV/atom | — |