Cerium gallium oxide (CeGaO₃) is a compound semiconductor belonging to the perovskite oxide family, combining rare-earth and III-V element chemistry. While primarily an experimental material studied in research contexts, it is of interest for transparent conducting oxides (TCOs), photocatalysis, and potential optoelectronic applications where the rare-earth dopant can provide tunable bandgap and luminescent properties. The material bridges rare-earth oxide and gallium oxide chemistries, offering potential advantages in UV-transparent electronics and catalytic systems where conventional alternatives like indium tin oxide or pure gallium oxide may be limiting.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27,354.1 | ksi | — | ||
Shear Modulus(G) | 14,654.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00210 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.718 | eV/atom | — |