CdZrOFN is an experimental oxynitride semiconductor compound combining cadmium, zirconium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors being researched for next-generation optoelectronic and photocatalytic applications where tunable bandgap and enhanced light absorption are advantageous. While not yet commercialized at scale, oxynitride semiconductors in this composition family show promise for photocatalysis, visible-light-driven water splitting, and potentially advanced thin-film transistor or sensor applications where conventional single-anion semiconductors have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4000 | eV | — | ||
Magnetic Moment(μB) | -4.101e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5200 | eV/atom | — |