CdTaO2N is an oxynitride semiconductor compound combining cadmium, tantalum, oxygen, and nitrogen elements. This is a research-phase material being investigated for photocatalytic and optoelectronic applications, particularly in visible-light water splitting and hydrogen generation, where its tuned bandgap offers advantages over traditional oxides. The material belongs to the family of ternary/quaternary nitride semiconductors, which are emerging alternatives to conventional photocatalysts like TiO2 for environmental remediation and renewable energy conversion.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.400 | eV | — | ||
Magnetic Moment(μB) | -0.000104 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2400 | eV/atom | — |