CdSnP2 is a ternary III-V semiconductor compound combining cadmium, tin, and phosphorus in a zinc-blende crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and direct band structure make it attractive for infrared detection, solar cells, and high-efficiency light-emitting devices operating in niche wavelength ranges. While not yet widely commercialized compared to binary semiconductors like GaAs or InP, CdSnP2 represents an important family of mixed-metal phosphides being explored to bridge performance gaps in specific spectral regions and extreme-environment electronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 8,252.3 | ksi | — | ||
| ↳ | 8,380.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G)2 entries | 4,184.2 | ksi | — | ||
| ↳ | 4,274.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1678 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 0.1270 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 235.3 | - | — | ||
| ↳ | 24.78 range 23.41–26.15median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.00821 | C/m² | — | ||
| ↳ | 1.636 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -42.42 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1031 | eV/atom | — |