CdSnO3 is a ternary oxide semiconductor compound combining cadmium, tin, and oxygen elements, belonging to the class of mixed-metal oxides. This material is primarily of research and developmental interest rather than established industrial production, with investigation focused on transparent conducting oxides (TCOs) and optoelectronic applications where cadmium-containing alternatives to conventional indium tin oxide (ITO) are being explored. Engineers would consider CdSnO3 in specialized applications requiring wide bandgap semiconductors, though regulatory restrictions on cadmium in many regions limit its practical adoption compared to cadmium-free alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2496 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 3.000 | eV | — | ||
| ↳ | 1.055 | eV | — | ||
| ↳ | 1.300 | eV | — | ||
| ↳ | 1.134 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.894 range 5.026–12.76median of 2 measurements | - | — | ||
Magnetic Moment(μB)2 entries | -0.00000357 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -57.24 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00200 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.674 | eV/atom | — | ||
| ↳ | 0.4400 | eV/atom | — | ||
| ↳ | -1.564 | eV/atom | — |