CdSiP2 is a III-V ternary semiconductor compound combining cadmium, silicon, and phosphorus in a zincblende crystal structure. It is primarily investigated in research and specialized optoelectronic applications, particularly for infrared detection and laser systems operating in the mid-infrared spectrum where its bandgap and optical properties offer advantages over binary semiconductors like CdTe or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 74.88 | GPa | — | ||
| ↳ | 75.59 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G)2 entries | 39.23 | GPa | — | ||
| ↳ | 41.37 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.865 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 1.461 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 13.52 | - | — | ||
| ↳ | 13.78 | - | — | ||
| ↳ | 12.28 range 11.14–13.42median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04713 | C/m² | — | ||
| ↳ | 0.7595 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -138.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2108 | eV/atom | — |