CdSiP2 — Properties & Data | MatWorld

CdSiP2

Name: CdSiP2
Brand: MatWorld

semiconductor

· CdSiP2

CdSiP2 is a III-V ternary semiconductor compound combining cadmium, silicon, and phosphorus in a zincblende crystal structure. It is primarily investigated in research and specialized optoelectronic applications, particularly for infrared detection and laser systems operating in the mid-infrared spectrum where its bandgap and optical properties offer advantages over binary semiconductors like CdTe or InP.

infrared detectorsmid-infrared optoelectronicslaser systemsradiation detectionresearch semiconductorshigh-energy photon applications

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Units:

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	74.88	GPa	DFT
↳	75.59	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	39.23	GPa	DFT
↳	41.37	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	3.865	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.800	eV	Measured
↳	1.461	eV	DFT · OptB88vdW
↳	2.017	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	13.78	-	DFT · OptB88vdW
↳	13.52	-	DFT · PBE
↳	12.28 range 11.14–13.42median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.35	-	DFT · OptB88vdW
↳	8.670	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.4833	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.7067	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.7595	C/m²	DFT · OptB88vdW
↳	0.04713	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00140	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00271	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-138.1	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	292	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	22.59	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2108	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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CdSiP2

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