CdSiO₂S is a cadmium silicate sulfide compound—a quaternary semiconductor material combining cadmium, silicon, oxygen, and sulfur elements. This is a research-phase material studied primarily for its potential in optoelectronic and photovoltaic applications, where the combination of elements offers tunable bandgap properties and light-responsive characteristics. The material belongs to the broader family of metal chalcogenide semiconductors and represents an exploratory composition aimed at improving efficiency or cost in devices where conventional binary or ternary semiconductors show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.900 | eV | — | ||
Magnetic Moment(μB) | 0.000155 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.000 | eV/atom | — |