CdSiAs₂ is a III-V compound semiconductor formed from cadmium, silicon, and arsenic, belonging to the family of ternary semiconductors used in optoelectronic and high-frequency applications. Historically explored for infrared detector windows, solar cells, and microwave devices, this material offers a direct bandgap suitable for photonic applications, though its use remains largely restricted to specialized research and defense applications due to cadmium toxicity concerns and the availability of superior alternatives like GaAs and InP. Engineers considering CdSiAs₂ typically work in niche infrared sensing, space-grade photovoltaics, or millimeter-wave electronics where its specific lattice properties provide advantages, though environmental and health regulations now limit its commercial deployment in most developed markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.59 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 32.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.880 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 0.3630 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 36.51 | - | — | ||
| ↳ | 17.28 range 16.10–18.46median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.00801 | C/m² | — | ||
| ↳ | 0.9379 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -59.66 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.09416 | eV/atom | — |