CdSbSe is a ternary semiconductor ceramic compound combining cadmium, antimony, and selenium elements, belonging to the family of II-VI semiconductors used in optoelectronic and infrared detection applications. This material is primarily of research and specialized industrial interest for infrared sensing, thermal imaging detectors, and photovoltaic devices where its semiconductor bandgap properties enable detection across specific wavelength ranges. CdSbSe represents an alternative to more common binary semiconductors (like CdSe or CdTe) when tuned bandgap characteristics or specific thermal and optical properties are required for niche detector or imaging systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.92 | GPa | — | ||
Poisson's Ratio(ν) | 0.3900 | - | — | ||
Shear Modulus(G) | 17.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.390 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4694 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.07018 | eV/atom | — |