CdS0.8Se0.2

semiconductor

· CdS0.8Se0.2

CdS₀.₈Se₀.₂ is a direct-bandgap II-VI semiconductor alloy composed of cadmium sulfide and cadmium selenide in a 4:1 molar ratio. This mixed-anion compound occupies an intermediate position in the CdS–CdSe solid solution series, tuning the bandgap energy between the two parent compounds for tailored optoelectronic performance. The material is primarily of research and specialized industrial interest for photovoltaic absorbers, radiation detectors, and visible-to-infrared photonic devices where bandgap engineering is critical; it offers advantages over single-phase CdS or CdSe when intermediate wavelength response or thermal stability between the two is required.

thin-film photovoltaicsradiation detectionoptoelectronic devicesbandgap-engineered semiconductorsresearch & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.230	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdS0.8Se0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control