CdInSe is a ternary semiconductor ceramic compound combining cadmium, indium, and selenium—a member of the II-VI semiconductor family used in optoelectronic and photovoltaic research. Historically studied for infrared detectors, solar cells, and light-emitting devices due to its tunable bandgap properties, though cadmium-containing materials face increasing regulatory restrictions in many markets. Engineers may encounter this compound in legacy infrared imaging systems or advanced photovoltaic research contexts, where the material's semiconducting properties and spectral responsivity make it attractive, but modern designs often substitute cadmium-free alternatives (such as CdZnSe or InGaAs systems) to meet environmental and safety standards.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.14 | GPa | — | ||
Poisson's Ratio(ν) | 0.4600 | - | — | ||
Shear Modulus(G) | 11.47 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.329 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2604 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1405 | eV/atom | — |