CdInN3 is a ternary nitride ceramic compound combining cadmium, indium, and nitrogen, belonging to the family of wide-bandgap semiconductors and advanced ceramics. This material is primarily of research and developmental interest for optoelectronic and high-energy applications, where its nitride composition offers potential for high-temperature stability, radiation hardness, and tunable electronic properties compared to binary nitrides like GaN or InN. CdInN3 represents an emerging material class in semiconductor research with potential applications in next-generation power electronics, UV/visible light emission, and extreme environment devices, though industrial deployment remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 4.070 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.040 | eV/atom | — |