CdInGaS4 is a quaternary semiconductor ceramic compound combining cadmium, indium, gallium, and sulfur into a chalcogenide structure. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and layered crystal structure make it a candidate for next-generation photon-harvesting devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,911.7 | ksi | — | ||
Exfoliation Energy(Eexf) | 37.07 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 2,620.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1538 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2710 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.59 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | 32.21 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07940 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6254 | eV/atom | — |