CdInAsSe

ceramic
· JVASP-101216· CdInAsSe

CdInAsSe is a quaternary III-V semiconductor compound formed from cadmium, indium, arsenic, and selenium elements, belonging to the direct bandgap semiconductor family. This material is primarily investigated in research and development contexts for infrared (IR) optoelectronic applications, where its tunable bandgap—controlled by varying the cadmium-to-indium and arsenic-to-selenium ratios—enables detection and emission across the mid- to long-wave infrared spectrum. Engineers and researchers select quaternary III-V compounds like CdInAsSe for thermal imaging, gas sensing, and space-based infrared instrumentation where lattice-matched integration with other semiconductor layers and precise spectral response control are critical advantages over binary or ternary alternatives.

infrared detectorsthermal imaging sensorsspectroscopy instrumentationgas sensing devicesspace opticslattice-matched heterostructures

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
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ksi——
Poisson's Ratio(ν)
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Shear Modulus(G)
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Verified Unverified Low confidence (<80%) Link to source
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Density(ρ)
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lb/in³——
Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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median of 2 measurements
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Magnetic Moment(μB)
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µB——
Verified Unverified Low confidence (<80%) Link to source
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Energy Above Hull(ΔEhull)
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eV/atom——
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.