CdInAsSe — Properties & Data | MatWorld

CdInAsSe

ceramic

· JVASP-101216· CdInAsSe

CdInAsSe is a quaternary III-V semiconductor compound formed from cadmium, indium, arsenic, and selenium elements, belonging to the direct bandgap semiconductor family. This material is primarily investigated in research and development contexts for infrared (IR) optoelectronic applications, where its tunable bandgap—controlled by varying the cadmium-to-indium and arsenic-to-selenium ratios—enables detection and emission across the mid- to long-wave infrared spectrum. Engineers and researchers select quaternary III-V compounds like CdInAsSe for thermal imaging, gas sensing, and space-based infrared instrumentation where lattice-matched integration with other semiconductor layers and precise spectral response control are critical advantages over binary or ternary alternatives.

infrared detectorsthermal imaging sensorsspectroscopy instrumentationgas sensing devicesspace opticslattice-matched heterostructures

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	6,729.8	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.4500	-	DFT · OptB88vdW
Shear Modulus(G)	-1,766.6	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1934	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · OptB88vdW
↳	0.8160	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)	8.577	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	26.58	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00500	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4004	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdInAsSe

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental