CdInAsSe is a quaternary III-V semiconductor compound formed from cadmium, indium, arsenic, and selenium elements, belonging to the direct bandgap semiconductor family. This material is primarily investigated in research and development contexts for infrared (IR) optoelectronic applications, where its tunable bandgap—controlled by varying the cadmium-to-indium and arsenic-to-selenium ratios—enables detection and emission across the mid- to long-wave infrared spectrum. Engineers and researchers select quaternary III-V compounds like CdInAsSe for thermal imaging, gas sensing, and space-based infrared instrumentation where lattice-matched integration with other semiconductor layers and precise spectral response control are critical advantages over binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.40 | GPa | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | -12.18 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.353 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4080 range 0.000–0.8160median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00500 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4004 | eV/atom | — |