CdIn8Te13

semiconductor

· CdIn8Te13

CdIn8Te13 is a ternary semiconductor compound in the II-VI material family, combining cadmium, indium, and tellurium. This is a research-phase material explored for its potential in infrared detection and photovoltaic applications, where the bandgap and lattice properties can be engineered through composition tuning. While not yet widely deployed in commercial products, ternary cadmium-indium-telluride compounds are investigated as alternatives to binary semiconductors for thermal imaging and space-qualified photodetectors, though regulatory and toxicity concerns around cadmium limit adoption compared to lead-free semiconductors like HgCdTe or InSb variants.

infrared photodetectorsthermal imaging sensorsspace optics (research phase)high-energy radiation detectioncompound semiconductor researchbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.020	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdIn8Te13

Electrical Properties

Regulatory Screening

Environmental

Export Control