CdIn4I6 is a ternary cadmium–indium iodide ceramic compound belonging to the family of metal halide semiconductors. This material is primarily of research and development interest rather than established in high-volume production, with potential applications in radiation detection, photovoltaic devices, and solid-state optoelectronics where its semiconductor and scintillation properties could be leveraged. Engineers evaluating this material should recognize it as an experimental compound whose advantages over conventional alternatives (such as CdTe or CdZnTe detectors) remain under investigation, making it suitable for exploratory projects in nuclear instrumentation or advanced imaging systems rather than proven, production-ready applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1974 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.576 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -201.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00400 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5563 | eV/atom | — |