CdIn2Se4 is a ternary chalcogenide semiconductor compound combining cadmium, indium, and selenium. This material belongs to the I–III–VI₂ semiconductor family and is primarily of research and developmental interest for optoelectronic and photovoltaic applications. Unlike binary semiconductors, ternary compounds like CdIn2Se4 offer tunable bandgap and enhanced material properties, making them candidates for next-generation solar cells, photodetectors, and infrared sensing devices where compositional flexibility provides advantages over conventional GaAs or CdTe alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.66 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 17.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.360 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.720 | eV | — | ||
| ↳ | 0.6890 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.54 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5843 | C/m² | — | ||
Seebeck Coefficient(S) | -45.09 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000700 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5606 | eV/atom | — |