CdIn2S4 is a quaternary II-III-VI semiconductor compound combining cadmium, indium, and sulfur in a spinel-type crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it attractive for thin-film solar cells, photodetectors, and light-emitting devices. While not yet widely deployed in production, CdIn2S4 represents the broader family of multinary semiconductors being investigated as alternatives to conventional binary materials, offering potential for improved performance in next-generation photonic and energy conversion systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,703 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,611.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1702 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.038 | eV | DFT · OptB88vdW | ||
| ↳ | 2.566 | eV | DFT · TBmBJ | ||
| ↳ | 2.700 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.809 | - | DFT · OptB88vdW | ||
| ↳ | 5.411 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.1200 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.020 | me | DFT · OptB88vdW · 27°C | ||
Thermoelectric Power Factor(PF)2 entries | 0.000219 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00155 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -39.23 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 404 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 11.42 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6634 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data