CdIn2S4 is a quaternary II-III-VI semiconductor compound combining cadmium, indium, and sulfur in a spinel-type crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it attractive for thin-film solar cells, photodetectors, and light-emitting devices. While not yet widely deployed in production, CdIn2S4 represents the broader family of multinary semiconductors being investigated as alternatives to conventional binary materials, offering potential for improved performance in next-generation photonic and energy conversion systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,703 | ksi | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 3,611.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1702 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.700 | eV | — | ||
| ↳ | 1.038 | eV | — | ||
Seebeck Coefficient(S) | -39.23 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6634 | eV/atom | — |