CdHgSe₂ is a II-VI semiconductor ceramic compound combining cadmium, mercury, and selenium—a ternary chalcogenide material synthesized primarily for research and specialized optoelectronic applications. This material family is investigated for infrared detection, photovoltaic devices, and non-linear optical components where the bandgap and tunable electronic properties of mercury-cadmium-selenium systems offer advantages over binary alternatives. While not widely deployed in high-volume production, CdHgSe₂ represents an important experimental platform in semiconductor physics for understanding alloy behavior and engineering materials with tailored optical-electronic responses in the infrared spectrum.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.92 | GPa | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 14.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.557 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3380 range 0.000–0.6760median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01750 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2886 | eV/atom | — |