CdHfOFN is an experimental oxynitride semiconductor compound combining cadmium, hafnium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors designed to engineer bandgap properties and defect tolerance beyond conventional oxide or nitride semiconductors alone. While primarily in research development rather than established industrial production, oxynitride semiconductors like this are investigated for next-generation photovoltaic, photocatalytic, and optoelectronic applications where tunable electronic structure and improved light absorption are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3000 | eV | — | ||
Magnetic Moment(μB) | 6.544e-16 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5400 | eV/atom | — |