CdGeO2S

semiconductor

· CdGeO2S

CdGeO₂S is a quaternary semiconductor compound combining cadmium, germanium, oxygen, and sulfur—a research-stage material that blends characteristics of oxide and chalcogenide semiconductors. This compound family is explored primarily in photonic and optoelectronic applications where tunable bandgap and mixed anion chemistry offer potential advantages over binary semiconductors, though industrial maturity remains limited compared to established alternatives like CdTe or GaAs.

photovoltaic devices (research)optoelectronic detectorsthin-film solar cellswide-bandgap semiconductorsexperimental photonic materialscadmium-based compound research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-4.515e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdGeO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control