CdGeAsP

ceramic
· JVASP-100419· CdGeAsP

CdGeAsP is a quaternary semiconductor compound belonging to the II-IV-V₂ material family, combining cadmium, germanium, arsenic, and phosphorus in a direct-bandgap structure. This material is primarily investigated in optoelectronic research contexts for infrared (IR) and mid-infrared applications, where its tunable bandgap through compositional variation makes it attractive for detectors, LEDs, and laser diodes operating in wavelength ranges difficult to access with conventional semiconductors. CdGeAsP and similar cadmium-based ternary/quaternary compounds are less common in high-volume production compared to GaAs or InP systems, but represent important platforms for specialized defense, medical imaging, and spectroscopy applications where cadmium's heavy-atom properties enable detection or emission in specific IR windows.

infrared detectorsmid-IR optoelectronicsresearch semiconductorsspectroscopy and sensinglaser diodes (specialized wavelengths)thermal imaging (developmental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Density(ρ)
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kg/m³——
Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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Magnetic Moment(μB)
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µB——
Verified Unverified Low confidence (<80%) Link to source
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Energy Above Hull(ΔEhull)
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eV/atom——
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.