CdGeAsP is a quaternary semiconductor compound belonging to the II-IV-V₂ material family, combining cadmium, germanium, arsenic, and phosphorus in a direct-bandgap structure. This material is primarily investigated in optoelectronic research contexts for infrared (IR) and mid-infrared applications, where its tunable bandgap through compositional variation makes it attractive for detectors, LEDs, and laser diodes operating in wavelength ranges difficult to access with conventional semiconductors. CdGeAsP and similar cadmium-based ternary/quaternary compounds are less common in high-volume production compared to GaAs or InP systems, but represent important platforms for specialized defense, medical imaging, and spectroscopy applications where cadmium's heavy-atom properties enable detection or emission in specific IR windows.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.909 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06800 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00670 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.07660 | eV/atom | — |