CdGeAs₂ is a ternary III-V compound semiconductor combining cadmium, germanium, and arsenic in a chalcopyrite crystal structure. It is primarily a research and specialized optoelectronic material valued for its tunable bandgap and nonlinear optical properties, particularly in the infrared spectrum where it enables frequency conversion and parametric amplification applications. While less common than binary semiconductors like GaAs, CdGeAs₂ is notable for its potential in mid-infrared laser systems, optical parametric oscillators, and radiation detection, though current industrial deployment remains limited and material development continues in academic and defense research settings.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.21 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 27.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.313 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6100 | eV | — | ||
| ↳ | 0.1450 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 23.22 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7109 | C/m² | — | ||
Seebeck Coefficient(S) | -95.83 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.06465 | eV/atom | — |