CdGaO₂S is a quaternary semiconductor ceramic composed of cadmium, gallium, oxygen, and sulfur, belonging to the oxysulfide compound family. This material is primarily of research interest for optoelectronic and photocatalytic applications, where mixed anion systems (oxide + sulfide) are explored to engineer bandgap properties and light absorption characteristics. It represents an experimental compound rather than a mature industrial material, and is studied as part of broader efforts to develop non-toxic, earth-abundant alternatives to traditional cadmium-based semiconductors or to create novel photofunctional ceramics with tuned electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9973 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8400 | eV/atom | — |