CdGaO2F
semiconductorCdGaO2F is an experimental mixed-anion semiconductor compound combining cadmium, gallium, oxygen, and fluorine elements. This material belongs to the family of oxyfluoride semiconductors, which are primarily investigated in research settings for optoelectronic and photocatalytic applications due to their tunable band gaps and unique crystal structures resulting from the dual-anion composition. The incorporation of fluorine alongside oxygen creates structural and electronic properties distinct from conventional binary oxides, making it of interest in next-generation photovoltaic, photodetection, and environmental remediation applications, though it remains largely at the laboratory stage without widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |