CdGaO2F

semiconductor

· CdGaO2F

CdGaO2F is an experimental mixed-anion semiconductor compound combining cadmium, gallium, oxygen, and fluorine elements. This material belongs to the family of oxyfluoride semiconductors, which are primarily investigated in research settings for optoelectronic and photocatalytic applications due to their tunable band gaps and unique crystal structures resulting from the dual-anion composition. The incorporation of fluorine alongside oxygen creates structural and electronic properties distinct from conventional binary oxides, making it of interest in next-generation photovoltaic, photodetection, and environmental remediation applications, though it remains largely at the laboratory stage without widespread industrial deployment.

experimental photovoltaicsphotocatalysis researchoptoelectronic devicesphotodetectorsenvironmental water treatmentband-gap engineering studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-1.211e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control