CdGa2Te4
ceramicCdGa₂Te₄ is a ternary II-VI semiconductor ceramic compound combining cadmium, gallium, and tellurium in a tetrahedral crystal structure. This material is primarily of research and specialized optoelectronic interest rather than high-volume industrial production, investigated for infrared detection, nonlinear optical applications, and wide-bandgap semiconductor devices where its lattice properties enable tunable performance between binary CdTe and GaTe systems. Engineers consider CdGa₂Te₄ when designing infrared sensors, parametric amplifiers, or radiation-hard detectors in environments where the specific band structure and thermal stability of mixed II-VI compounds offer advantages over single-component alternatives or III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,327.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 2,588.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1989 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9700 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.10 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5055 | C/m² | — | ||
Seebeck Coefficient(S) | -153.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3564 | eV/atom | — |