CdGa2Te4
ceramicCdGa₂Te₄ is a ternary II-VI semiconductor ceramic compound combining cadmium, gallium, and tellurium in a tetrahedral crystal structure. This material is primarily of research and specialized optoelectronic interest rather than high-volume industrial production, investigated for infrared detection, nonlinear optical applications, and wide-bandgap semiconductor devices where its lattice properties enable tunable performance between binary CdTe and GaTe systems. Engineers consider CdGa₂Te₄ when designing infrared sensors, parametric amplifiers, or radiation-hard detectors in environments where the specific band structure and thermal stability of mixed II-VI compounds offer advantages over single-component alternatives or III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |