CdGa2S4 is a ternary II-VI semiconductor compound combining cadmium, gallium, and sulfur in a defect chalcopyrite crystal structure. This material is primarily investigated in photovoltaic and optoelectronic research contexts, particularly for thin-film solar cells and infrared detectors where its direct bandgap and optical properties offer advantages over binary alternatives like CdS or GaAs. Its notable feature is a tunable bandgap and strong photon absorption characteristics that make it attractive for multijunction solar cell designs and specialized imaging applications, though it remains largely in the research and development phase rather than high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,145.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 3,588.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1423 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.440 | eV | — | ||
| ↳ | 2.113 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.865 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.6040 | C/m² | — | ||
Seebeck Coefficient(S) | -70.90 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7460 | eV/atom | — |